Semiconductor silicon wafer and process for producing it

ABSTRACT

Provided is a process for producing a semiconductor silicon wafer by which an intrinsic gettering effect can be improved and at the same time the top side can be made free from faults. A silicon ingot is produced and sliced to obtain silicon wafers. Then, a polycrystal silicon depositing film is formed on one side of a silicon wafer, which is subjected to a heat treatment in an inert gas, a reducing gas or a mixture thereof to discharge oxygen from the vicinity of the other side. Alternatively, after discharging oxygen from the silicon wafer by a heat treatment, a polycrystal silicon depositing film may be formed on one side of the silicon wafer.

This is a division of application Ser. No. 08/279,007 filed on Jul. 22,1994, now U.S. Pat. No. 5,534,294.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a process for producing a semiconductorsilicon wafer. Particularly, the present invention relates to asemiconductor silicon wafer having not only a high gettering ability butalso a denuded zone on the top side (surface) thereof, and to a processfor producing it.

2. Related Background Art

Semiconductor silicon wafers are obtained by slicing a silicon ingotinto wafers, and then various heat treatments are effected on the thusobtained semiconductor silicon wafers in the device processes.

A variety of gettering techniques are used to let metal contaminations,which were introduced into a semiconductor silicon wafer in the deviceprocesses, be captured in a region other than an element active region.The gettering techniques are classified into two large groups.

One of them is an intrinsic gettering (hereinafter referred to as "IG")process as shown in FIG. 12A, which utilizes precipitates of oxygencontained in the semiconductor silicon wafer in an amount of about1×10¹⁸ (cm⁻³) as formed in the heat treatments. With heat treatments ata high temperature, at a low temperature and at a medium temperature inthis order, outward diffusion of surface oxygen in semiconductor siliconwafer, nucleus formation for precipitates of oxygen and growth of oxygenprecipitates occur, whereby the oxygen precipitates are formed onlyinside the semiconductor silicon wafer. An IG semiconductor siliconwafer is thus obtained with an element active region on the top sidebeing a denuded zone. Although IG is generally known to have a highergettering ability as compared with extrinsic gettering (hereinafterreferred to as "EG") described below, it is extremely difficult to makethe denuded zone on the top side completely free from faults.

The most generally used EG is a sand-blasting method, in which finescars having a size of about 1 μm or less are formed by bombarding theback side of the semiconductor silicon wafer with fine siliconparticles. Then, the semiconductor silicon wafer thus obtained isoxidized to cause oxidation-induced stacking faults (OSF) or dislocationfrom the scars, so that the back side of the semiconductor silicon waferbecomes metal gettering sites (FIG. 12B). However, silicon (Si) could bepeeled off in a scar portion so as to produce fine dust.

A recent method drawing attention as EG with high gettering ability is aprocess for producing a semiconductor silicon wafer having polycrystalsilicon on the back side. This is a process in which polycrystal siliconis deposited by the vapor growth method (CVD) on the back side of asilicon wafer sliced off from a silicon ingot in the form of a wafer.According to this process, oxygen precipitates can be induced by thegettering effect in the polycrystal grain boundaries and by the heattreatments in the device processes, whereby both effects of EG and IGcan be expected (FIG. 12C).

Incidentally, CMOS heat treatment simulation was conducted to measurethe density of produced oxygen precipitates along the cross section ofsemiconductor silicon wafer, using two types of semiconductor siliconwafers made of silicon wafers of oxygen content Oi!=13×10¹⁷ (cm⁻³)sliced off from a same ingot. One of them was produced by depositingpolycrystal silicon on the back side of silicon wafer, while the otherby EG in the sand-blasting method. The measurement results are shown inFIG. 13. As shown in FIG. 13, the semiconductor silicon wafer with backside polycrystal silicon has the density of oxygen precipitates about2-order higher than that of the sand-blasting semiconductor siliconwafer, so that greater IG effect can be expected. On the other hand, thesilicon wafer having back side polycrystal silicon shows, however, thatthe density of oxygen precipitates is higher in the vicinity of the topside. Such oxygen precipitates in the vicinity of the top side becomerecombination centers of carriers, which in turn cause degradation ofdevice characteristics, or crystal defects.

Further, when the silicon wafer is subjected to a heat treatment at ahigh temperature in a reducing atmosphere for forming a denuded zone onthe top side, employing the conventional extrinsic gettering method forforming a polycrystal silicon film on the back side of a silicon wafer,the back side polycrystal silicon film is recrystallized, whereby thethickness of the polycrystal silicon film might be considerably reducedso as to considerably lower the gettering ability.

Furthermore, various types of heat treatments at high temperature areperformed in actual manufacturing steps of semiconductor devices,whereby the recrystallization of the polycrystal silicon film alsooccurs so as to lower the gettering ability.

SUMMARY OF THE INVENTION

The present invention has been accomplished under the abovecircumstances. An object of the present invention is to provide asemiconductor silicon wafer which has a high gettering ability, whichcan form a denuded zone on the top side and which can fully suppress adecrease of polycrystal silicon film during heat treatments at hightemperature, and further to provide a process for producing it.

The present invention provides, as in claim 1, a process for producing asemiconductor silicon wafer, comprising a step of forming a polycrystalsilicon depositing film on one side of a silicon wafer and a subsequentstep of subjecting the silicon wafer to a heat treatment in an inertgas, a reducing gas or a mixture thereof.

Further, the present invention provides, as in claim 3, a process forproducing a semiconductor silicon wafer, comprising a step of subjectinga silicon wafer to a heat treatment in an inert gas, a reducing gas or amixture thereof, and a subsequent step of forming a polycrystal silicondepositing film on one side of the silicon wafer.

Furthermore, the present invention provides, as in claim 7, a processfor producing a semiconductor silicon wafer, comprising a step offorming an oxide film having the thickness in the range of about 1 nm-3nm on one side of a silicon wafer, a step of forming a polycrystalsilicon depositing film on the oxide film thus formed and a step ofsubjecting the silicon wafer to a heat treatment in an inert gas, areducing gas or a mixture thereof.

In the above process for producing the semiconductor silicon wafer, itis desired that the polycrystal silicon film is doped with at least oneof boron, arsenide or phosphorus.

Further, it is preferred that the above heat treatment is performed at atemperature of at least 1100° C. for 10 minutes and that the thicknessof the polycrystal silicon film remains in the range of about 0.5 μm-2.5μm after the above heat treatment.

Yet furthermore, the present invention provides, as in claim 12, asemiconductor silicon wafer having an oxide film formed in the thicknessof about 1 nm-3 nm on one side of the silicon wafer and a polycrystalsilicon depositing film formed on the surface of the oxide film.

In the above semiconductor silicon wafer, the thickness of thepolycrystal silicon depositing film is preferably about 0.5 μm-2.5 μm.

The process for producing a semiconductor silicon wafer, as in claim 1or 3, includes forming a polycrystal silicon depositing film on one sideof silicon wafer and discharging oxygen from the other side, so thatoxygen precipitates are produced by the heat treatments in the deviceprocesses, whereby the gettering effect can be improved and a denudedzone can be formed on the other side.

According to the present invention as in claim 7 or 12, a polycrystalsilicon film is deposited on the back side of the silicon wafer after anoxide film is formed in the thickness of 1 nm-3 nm on the back side ofthe silicon wafer, and the recrystallization of the polycrystal siliconcan be suppressed by the oxide film in the subsequent heat treatments.Accordingly, a high gettering ability can be maintained throughout thesemiconductor fabricating processes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are flow charts to show a process for producing asemiconductor silicon wafer in the first embodiment of the presentinvention;

FIG. 2 is a drawing to show an oxygen concentration distribution in asemiconductor silicon wafer obtained by the first embodiment of thepresent invention;

FIG. 3 is a drawing to show a density change of oxygen precipitatesafter the CMOS heat treatments of a semiconductor silicon wafer producedin a H₂ atmosphere;

FIG. 4 is a drawing to show a density change of oxygen precipitatesafter the CMOS heat treatments in a semiconductor silicon wafer producedin an Ar atmosphere;

FIG. 5 is a drawing to show a density change of oxygen precipitatesafter the CMOS heat treatments in a semiconductor silicon wafer producedin a He atmosphere;

FIG. 6 is a drawing to show a density change of oxygen precipitatesafter the CMOS heat treatments in a semiconductor silicon wafer producedin a CO atmosphere;

FIG. 7 is a drawing to show measurement results of oxide withstandvoltage tests for semiconductor silicon wafers obtained by the presentinvention;

FIG. 8 is a drawing to show a concentration change of oxygenprecipitates in a semiconductor silicon wafer obtained by the presentinvention;

FIG. 9 is a flow chart to show a modification of the first embodimentaccording to the present invention;

FIG. 10 is a flow chart to show another modification with correspondenceto FIG. 9;

FIG. 11 is a flow chart to show a conventional manufacturing process forcomparison;

FIGS. 12A, 12B and 12C are drawings to show conventional semiconductorsilicon wafers;

FIG. 13 is a drawing to show concentration changes of oxygenprecipitates in conventional semiconductor silicon wafers;

FIG. 14 is a drawing to show a schematic cross section of asemiconductor silicon wafer in the second embodiment according to thepresent invention;

FIG. 15 is a graph to show a ratio of decrease in film thickness ofpolycrystal silicon film relative to heat treatment time, in which theabscissa indicates the heat treatment time and the ordinate the filmthickness of polycrystal silicon film;

FIG. 16 is a graph of experimental results to show a relation between adecrease in polycrystal silicon film thickness and an oxide filmthickness formed on the back side of semiconductor silicon wafer after aheat treatment, in which the abscissa indicates the oxide film thicknessand the ordinate the polycrystal silicon film thickness;

FIG. 17 is a graph of experimental results to verify that surface faultsof semiconductor silicon wafer caused by Ni contaminations were reducedby the present invention; and

FIG. 18 is a graph of experimental results to verify that surface faultsof semiconductor silicon wafer caused by Fe contaminations were reducedby the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment

Now, embodiments of the present invention will be described withreference to the accompanying drawings. FIGS. 1A to 8 are drawings toshow the first embodiment of the process for producing semiconductorsilicon wafers according to the present invention. First, FIG. 1A showsa flow chart of the process according to the first embodiment of thepresent invention. As shown in FIG. 1A, a silicon ingot 10 is formed bythe Cz method (pulling method) so that it has Oi!=13×10¹⁷ (cm⁻³).

The silicon ingot 10 is cut into wafers to obtain silicon wafers 11(slicing). Then, the edges of each silicon wafer 11 are made round(beveling) and the silicon wafer 11 is subjected to lapping to make itsthickness close to the standard thickness, followed by etching to removecrushed layers by the lapping.

Next, a polycrystal silicon film 12 is deposited in the thickness of 1μm on the top and back sides of silicon wafer 11 by the CVD method.Then, only the top side is subjected to mirror polishing so as to removethe polycrystal silicon film 12 from the top side. Finally, oxygen inthe vicinity of the top side is discharged to the outside by a heattreatment at 1200° C. for 1 hour in a H₂ atmosphere.

FIG. 2 shows an oxygen concentration distribution in the vicinity of thetop side along the thickness of a semiconductor silicon wafer 15 thusobtained. As shown in FIG. 2, the oxygen concentration in the vicinityof the top side (0-20 μm) is extremely reduced by the heat treatment inthe H₂ reducing atmosphere, whereby a denuded zone can be formed nearthe top side of the semiconductor silicon wafer 15. In FIG. 2, theoxygen concentration after the heat treatment is shown by a solid lineand the oxygen concentration before the heat treatment by a dashed line.Measurement was conducted such that the semiconductor silicon wafer 15was subjected to the CMOS heating treatments and that oxygenprecipitates formed on the top side were measured. The results thusobtained are shown in FIG. 3. It is evident from a comparison betweenFIGS. 3 and 13 that a denuded zone can be provided on the top side byusing the process of the present embodiment.

Another embodiment of the present invention is shown in FIG. 1B. Asshown in FIG. 1B, a silicon wafer 11 is subjected to a heat treatment tooutwardly discharge oxygen from the vicinity of the top and back sidesof silicon wafer 11. Then, polycrystal silicon 12 is deposited in thethickness of 1.5 μm on the top and back sides of silicon wafer 11 by theCVD method, and only the top side is mirror-polished. In this case, theheat treatment is conducted at 1170° C. for 4 hours in an Ar inert gasatmosphere. Measurement was conducted such that the semiconductorsilicon wafer thus obtained was subjected to the CMOS heat treatmentsand that oxygen precipitates formed on the top side were measured. Themeasurement results are shown in FIG. 4.

The process as shown in FIG. 1A may be modified such that afterdepositing the polycrystal silicon 12, the heat treatment is performedat 1200° C. for 2 hours in a He atmosphere instead of that in the H₂atmosphere. Further, replacing the H₂ atmosphere, the heat treatment maybe conducted in a CO atmosphere at 1150° C. for 30 minutes. Measurementwas conducted such that semiconductor silicon wafers 15 obtained by theabove heat treatments were subjected to the CMOS heat treatments andthat top side oxygen precipitates were measured. The measurement resultsare shown in FIGS. 5 and 6.

The above processes showed examples in which the heat treatment wasperformed in the reducing atmosphere or in the inert atmosphere todischarge oxygen from the silicon wafer 11. In addition, the heattreatment may be performed in an atmosphere of a mixture of a reducinggas and an inert gas.

Then, the CMOS heat treatments were performed for four types ofsemiconductor silicon wafers, i.e., a semiconductor silicon waferobtained by the present invention, a conventional semiconductor siliconwafer having polycrystal silicon, a conventional semiconductor siliconwafer subjected to a heat treatment at a high temperature in a reducingatmosphere (1200° C., H₂, 1 hour) and a conventional semiconductorsilicon wafer subjected to the sand-blasting treatment, and adistribution of the density of oxygen precipitates in the thicknessdirection was measured. The four types of semiconductor silicon wafershad substrate oxygen concentration of 13×10¹⁷ (cm⁻³). The results areshown in FIG. 8.

As shown in FIG. 8, few oxygen precipitates are formed in thesemiconductor silicon wafer which was subjected to the sand-blastingtreatment, because of the low substrate oxygen concentration. Inside thesemiconductor silicon wafer having polycrystal silicon which shows aproperty to induce oxygen precipitates by a heat treatment and thesemiconductor silicon wafer subjected to the high-temperature heattreatment in the reducing atmosphere, oxygen precipitates are formed inan amount 2-order higher as compared with the semiconductor siliconwafer subjected to the sand-blasting treatment. In contrast, accordingto the present invention, oxygen precipitates are formed in an amountabout one-order higher than that of the semiconductor having thepolycrystal silicon and that of the semiconductor silicon wafersubjected to the high heat treatment in the reducing atmosphere, thusshowing that the semiconductor silicon wafer of the present inventionhas a higher gettering ability.

Five semiconductor silicon wafers obtained by the process as shown inFIG. 1A and five conventional semiconductor silicon wafers havingpolycrystal silicon were used to measure a withstand voltage of oxidefilm. The measurement conditions were such that the oxide film thicknesswas 30 nm and the capacitor area was 10 mm². The measurement results areshown in FIG. 7. As shown in FIG. 7, the semiconductor silicon wafers ofthe present invention have withstand-voltage-acceptable percentages (C+)higher than those of the conventional semiconductor silicon wafershaving polycrystal silicon, verifying superiority of the presentinvention. FIG. 7 is a drawing to show frequencies forwithstand-voltage-acceptable percentage (C+),withstand-voltage-defective percentage (B-) and intermediate percentage(B+).

Next described are modifications of the first embodiment of the presentinvention.

FIGS. 9 and 10 are drawings to show the modifications of the firstembodiment of the present invention. For comparison, a conventionallywell-known process for producing semiconductor silicon wafers is shownin FIG. 11.

As shown in FIG. 11, (1) a silicon ingot 10 is formed by the Cz method(pulling method). (2) The silicon ingot 10 is sliced to obtain siliconwafers 11. The slicing thickness is about 1 mm. (3) The edges of eachwafer are made round (bevel formation). (4) The thickness of the siliconwafer 11 is made as close as the standard thickness (625 μm) by lapping.(5) Crashed layers by the lapping are removed by etching and (7)mirror-polishing is finally performed for finishing only on one side(top side).

In the above steps, a donor killer heat treatment is performed at 650°C. after (4) the lapping step or (5) the etching step in order toeliminate thermal donors due to oxygen. In addition, in case of the EGtreatment being performed, (6) a sand-blasting treatment or (6a) apolycrystal silicon depositing treatment is conducted after the etchingstep (5), followed by (7) the last step of mirror-polishing forfinishing.

Now, a manufacturing process of the present invention is described withreference to FIG. 9. As shown in FIG. 9, (1) a silicon ingot 10 isformed by the Cz method, and then (2) the silicon ingot 10 is slicedinto wafers to obtain silicon wafers 11. The slicing thickness ofsilicon wafers 11 is about 1 mm.

Then, (6a) a polycrystal silicon depositing film 12 is formed on oneside of silicon wafer 11 in the thickness of 1 μm by the CVD method. Thepolycrystal silicon depositing treatment is conducted in the temperaturerange of from 620° C. to 650° C., so that thermal donors in the siliconwafer 11 are annihilated during this depositing treatment, whichobviates a separate donor killer treatment.

Then, (6b) oxygen precipitates are preliminarily formed in thepolycrystal silicon depositing film by a heat treatment at 1000° C. for10 hours.

Subsequently conducted as in the conventional steps are (3) beveling ofsilicon wafer edges (beveling formation) and (4) adjustment of thicknessof the silicon wafer 11 by lapping. As described, the polycrystalsilicon depositing film 12 formed on one side of the silicon wafer 11 isremoved to make the thickness of the silicon wafer be 625 μm.

Then, (5) crushed layers produced by the lapping are removed and (7)mirror-polishing is performed for finishing, whereby a semiconductorsilicon wafer 15 is obtained.

Another modification of the first embodiment of the present invention isdescribed with reference to FIG. 10. A manufacturing process as shown inFIG. 10 is the same as that shown in FIG. 9 except that (6a) apolycrystal silicon depositing film is formed on one side of siliconwafer 11 after (2) the step of slicing the silicon ingot 10 and (3) thestep of beveling formation.

In this process in FIG. 10, (6a) the polycrystal silicon depositingtreatment is conducted at 630° C. and the thickness of the depositingfilm is 0.8 μm. Further, the heat treatment for preliminarily formingoxygen precipitates in the polycrystal silicon depositing film 12 isconducted at 950° C. for 8 hours.

It was confirmed that the semiconductor silicon wafers produced by theprocess as shown in FIG. 10 were equivalent in characteristics to thesemiconductor silicon wafers obtained by the process as shown in FIG. 9.

Second Embodiment

The second embodiment of the present invention will be described belowwith reference to FIGS. 14 to 18.

A semiconductor silicon wafer 21 as shown in FIG. 14 has an oxygencontent of about 13×10¹⁷ (cm⁻³), which is used in the presentembodiment. The silicon wafer 21 is treated with a chemical to form anoxide film 26. This chemical treatment is performed at 70° C. for 20minutes using a chemical SH (H₂ O₂ /H₂ SO₄), to form the oxide film 26in the thickness of 2 nm. Here, the thickness 2 nm of oxide film 26 ismeasured by XPS (X-ray photoelectron spectroscopy). As the chemical,diluted HF (HF:H₂ O), SC2 (H₂ O₂ /HCl/H₂ O), NC2 (choline/H₂ O₂ /H₂ O)may be used instead of SH as used above.

After the chemical treatment, an undoped polycrystal silicon film 25 isdeposited in the thickness of 1 μm-2 μm by the vapor growth (CVD) methodon the back side 21b of the silicon wafer 21 having the oxide film 26formed thereon.

After the deposition of the polycrystal silicon film 25, the siliconwafer 21 is subjected to a high-temperature heat treatment at atemperature of at least 1100° C. for 10 minutes in an atmosphere ofhydrogen as the reducing gas. In this high-temperature heat treatment,an inert gas such as Ar, He, Xe, Kr, Ne, etc., or a mixture of an inertgas as listed and a reducing gas may be used instead of the reducinggas.

The silicon wafer 21 thus obtained has a surface denuded zone 22 formedon the top side 21a by the extrinsic gettering effect in the polycrystalgrain boundaries of the polycrystal silicon layer 25 deposited on thesilicon wafer back side 21b and by the intrinsic gettering effect in thehigh-temperature heat treatment. Further, the polycrystal silicon film25 can maintain a sufficient thickness even though subjected to thesubsequent high-temperature heat treatment, because recrystallization issuppressed by the existence of the oxide film 26.

Next, it is exemplified by experiments that the oxide film 26 serves tosuppress recrystallization of the polycrystal silicon film 25.

Two types of semiconductor silicon wafers of the present invention andtwo types of conventional semiconductor silicon wafers were prepared forthe experiments. The two types of semiconductor silicon wafers of thepresent invention were those obtained by forming an oxide film in thethickness of 2 nm by the same chemical treatment as above and bydepositing a polycrystal silicon film on the oxide film by the vaporgrowth method in the thickness of 1 μm or 2 μm, respectively. The twotypes of conventional semiconductor silicon wafers were those obtainedby depositing a polycrystal silicon film by the vapor growth method inthe thickness of 1 μm or 2 μm, respectively, without forming an oxidefilm. The two types of semiconductor silicon wafers of the presentinvention and the two types of conventional semiconductor silicon waferswere subjected to a high-temperature heat treatment. Thehigh-temperature heat treatment was performed in a hydrogen atmosphereat 1200° C. while a treating time was changed as 0, 0.5 hour, 1 hour, 2hours, 3 hours and 4 hours.

The results of the experiments are shown in FIG. 15, in which theabscissa indicates the high-temperature heat treatment time and theordinate the thickness of the polycrystal silicon film. It is clear fromthe graph that when the conventional semiconductor silicon wafers aresubjected to the high-temperature heat treatment, the polycrystalsilicon film is recrystallized to rapidly reduce its thickness. Incontrast, the two types of semiconductor silicon wafers of the presentinvention do not change the thickness of the polycrystal silicon filmeven though subjected to the high-temperature heat treatment.Accordingly, it was verified that the oxide film was able to fullysuppress the recrystallization of polycrystal silicon.

It is next exemplified by experiments that the optimum thickness of theoxide film 6 is in the range of about 1 nm to about 3 nm.

Four types of oxide films having the thickness of 0.1 nm, 0.5 nm, 1 nmor 3 nm were formed on four semiconductor silicon wafers using fourtypes of chemicals, i.e., diluted HF(HF:H₂ O), SC2(H₂ O₂ /HCl/H₂ O),NC2(choline/H₂ O₂ /H₂ O) and SH(H₂ O₂ /H₂ SO₄), respectively. Afterdepositing a polycrystal silicon film in the thickness of 1 μm on eachof the four types of semiconductor silicon wafers having the respectiveoxide films thus formed thereon, they were subjected to ahigh-temperature heat treatment at 1200° C. for 1 hour in a hydrogenatmosphere. The thickness of polycrystal silicon film was measured afterthe high-temperature heat treatment.

The experimental results are shown in FIG. 16, in which the abscissarepresents the thickness of oxide film and the ordinate the thickness ofpolycrystal silicon film. It is clear from the graph that therecrystallization of polycrystal silicon film by the high-temperatureheat treatment can be fully suppressed by setting the thickness of oxidefilm within the range of about 1 nm-3 nm. However, if the thickness ofoxide film becomes far larger than about 3 nm, metal impurities areblocked by the oxide film to stop diffusing into the polycrystal siliconfilm, whereby the gettering effect is considerably reduced.

Next described is a modification of the second embodiment of the presentinvention.

When a polycrystal silicon film 25 is deposited on a wafer as in FIG.14, it is doped with boron using B₂ H₆ (10¹⁹ atms/cm³). As the dopingmaterial, arsenide or phosphorus may be used instead of boron.

The depositing thickness of the polycrystal silicon film 25 ispreferably so set that when a high-temperature heat treatment isperformed at a temperature of at least 1100° C. for 10 or more minutesafter the deposition, the polycrystal silicon film 25 remains in thethickness of 0.5 μm-2.5 μm.

It is next exemplified by experiments that surface faults can beconsiderably reduced in the semiconductor silicon wafers according tothe present invention as compared with the conventional semiconductorsilicon wafers.

P-type boron-doped semiconductor silicon wafers having oxygen of 13×10¹⁷(cm⁻³) and p=2-5 (Ωcm) were prepared. In First Example A of the presentinvention, an oxide film was formed in the thickness of 2 nm on the backside of one of the semiconductor silicon wafers, and then a polycrystalsilicon film was deposited in the thickness of 1 μm to obtain asemiconductor silicon A. In Second Example B of the present invention,after forming an oxide film on the back side of another semiconductorsilicon wafer in the thickness of 2 nm, a polycrystal silicon film dopedwith boron (10¹⁹ atms/cm³) was deposited in the thickness of 1 μm toobtain a semiconductor silicon B. On the other hand, as ComparativeExample, a polycrystal silicon film was deposited in the thickness of 1μm without forming an oxide film on the back side of another one of theabove semiconductor silicon wafers.

The two types of semiconductor silicon wafers A and B of the presentinvention and the conventional semiconductor silicon wafer thus obtainedwere subjected to a heat treatment at 1200° C. for 1 hour in a hydrogenatmosphere, and then to heat treatments equivalent to the CMOStreatments, e.g., at 1200° C. for 10 hours, at 800° C. for 3 hours andat 1000° C. for 16 hours, and thereafter an oxide film on the top sidewas peeled off with NH₄ F. Then, the top side was metal-contaminatedwith Fe or Ni, and a high temperature heat treatment was conducted at1000° C. for 16 hours in an oxygen atmosphere to measure faults (OSF)appearing in the top side.

FIGS. 17 and 18 are graphs to show the experimental results ofcontamination with Ni and Fe, respectively, in which the abscissa showsthe two types of semiconductor silicon wafers A and B according to thepresent invention and the conventional semiconductor silicon wafer, andthe ordinate the oxidation-induced stacking faults density (OSF) on thetop side of the semiconductor silicon wafers.

As is evident from these graphs, the conventional semiconductor siliconwafer shows that the polycrystal silicon film is completely removed bythe high-temperature heat treatment, the CMOS heat treatments and thepeeling-off process of oxide film, so as to lose the gettering abilityand produce many surface faults. In contrast, the semiconductor siliconwafers of the present invention show that the recrystallization of thepolycrystal silicon film is suppressed by the existence of the oxidefilm formed on the back side of the silicon wafer and that thepolycrystal silicon film fully remains even after the high-temperatureheat treatment and the CMOS heat treatments. Therefore, thesemiconductor silicon wafers of the invention hold the high getteringability, so that the oxidation-induced stacking faults density (OSF) onthe top side of the semiconductor silicon wafer is remarkably reduced.

Further, as seen from FIG. 18, the semiconductor silicon wafer B of thepresent invention is higher in gettering ability for Fe than thesemiconductor silicon wafer A of the present invention, which assuresthat the boron-doping of polycrystal silicon film enhances the getteringability for Fe.

Furthermore, 16M-DRAMs were fabricated using the semiconductor siliconwafers of the present invention as described above and the conventionalsemiconductor silicon wafers, and it turned out that the semiconductorsilicon wafers of the present invention had a 10% improvement in Y_(D/S)as compared with the conventional semiconductor silicon wafers.

As described above, according to the present invention, the intrinsicgettering effect can be improved by producing oxygen precipitates in thepolycrystal silicon depositing film formed on one side of thesemiconductor silicon wafer when the semiconductor silicon wafer isheat-treated in the device processes, and at the same time, the otherside can be made free from faults. Thus, high-precision semiconductordevices can be obtained.

Further, according to the present invention, a polycrystal silicon filmis deposited after an oxide film is formed on the back side of thesemiconductor silicon wafer in the thickness of about 1 nm-3 nm, so thatthe recrystallization of the polycrystal silicon can be suppressed bythe existence of the oxide film in a high-temperature heat treatmentafter the deposition. Accordingly, the high gettering ability can bemaintained throughout the semiconductor fabrication processes, which canfully reduce faults appearing on the top side of the semiconductorsilicon wafer due to metal contamination.

What is claimed is:
 1. A semiconductor silicon wafer, comprising:asilicon wafer; an oxide film with a thickness of 1-3 nm formed on oneside of said silicon wafer; and a polycrystalline silicon depositingfilm has a thickness of from 1-2 μm is formed on said oxide film.
 2. Thesemiconductor silicon wafer of claim 1, wherein said oxide film isformed by a treatment with a chemical selected from the group consistingof H₂ O₂ /H₂ SO₄, HF/H₂ O, H₂ O₂ /HCl/H₂ O, and chlorine/H₂ O/H₂ O. 3.The semiconductor silicon wafer of claim 2, wherein said process furthercomprising the step of:subjecting said silicon wafer to a heat treatmentin an inert gas, a reducing gas or a mixture thereof in a manner wherethe other side of said silicon wafer is exposed to said gases, so thatoxygen is discharged from the other side whereby a denuded zone isformed on the other side.
 4. The semiconductor silicon wafer of claim 2,wherein said oxide film is formed by a treatment with a chemicalselected from the group consisting of H₂ O₂ /H₂ SO₄, HF/H₂ O, H₂ O₂/HCl/H₂ O, and chlorine/H₂ O₂ /H₂ O.
 5. The semiconductor silicon waferof claim 3, wherein said heat treatment is performed at a temperature ofat least 1100° C.
 6. The semiconductor silicon wafer of claim 2, whereinsaid polycrystal silicon depositing film is formed by a vapor growthmethod.
 7. The semiconductor silicon wafer of claim 3, wherein saidoxide film is formed by a treatment with a chemical selected from thegroup consisting of H₂ O₂ /H₂ SO₄, HF/H₂ O, H₂ O₂ /HCl/H₂ O, andchlorine/H₂ O₂ /H₂ O.
 8. The semiconductor silicon wafer of claim 3,wherein said polycrystal silicon depositing film is formed by a vaporgrowth method.